· Various selection ratio can be obtained through control of removal rate about SiO2 , SixNy, Poly-Si film.
(SiO2 : SixNy : Poly-Si = 1 : 1~20 : 1~20)
· Good within chip uniformity (chip center / edge loading improving)
· Verification of No scratch & dishing issue
· Good CMP process margin (Residue vs. loading)