product

CMP-Slurry

새 캔버스Characteristics
  · Various selection ratio can be obtained through control of removal rate about SiO2 , SixNy, Poly-Si film.
    (SiO2 : SixNy : Poly-Si = 1 : 1~20 : 1~20)
  · Good within chip uniformity (chip center / edge loading improving)
  · Verification of No scratch & dishing issue
  · Good CMP process margin (Residue vs. loading)